Static information storage and retrieval – Read/write circuit – Signals
Reexamination Certificate
2007-12-04
2007-12-04
Nguyen, Viet Q. (Department: 2827)
Static information storage and retrieval
Read/write circuit
Signals
C365S233100, C365S189050, C365S191000, C365S194000, C365S189080
Reexamination Certificate
active
11322948
ABSTRACT:
The present invention provides a semiconductor memory device for reducing a power consumption and securing an enough valid data window. A semiconductor memory device includes an align control signal generation unit for generating a plurality of align control signals sequentially activated by dividing a data strobe signal only when a data input/output is performed; and a data align unit for outputting a plurality of data which are sequentially inputted as a plurality of align data at the same time in response to the plurality of align control signals.
REFERENCES:
patent: 5892730 (1999-04-01), Sato et al.
patent: 6154418 (2000-11-01), Li
patent: 6381180 (2002-04-01), Merritt et al.
patent: 6434081 (2002-08-01), Johnson et al.
patent: 6525971 (2003-02-01), Merritt et al.
patent: 6615325 (2003-09-01), Mailloux et al.
patent: 6839290 (2005-01-01), Ahmad et al.
patent: 6909643 (2005-06-01), Kwean
patent: 2004/0218460 (2004-11-01), Lee
patent: 2004/0268016 (2004-12-01), Lee et al.
patent: 2005/0105349 (2005-05-01), Dahlberg et al.
patent: 11328963 (1999-11-01), None
Choi Byoung-Jin
Lee Chang-Hyuk
Blakely & Sokoloff, Taylor & Zafman
Hynix / Semiconductor Inc.
Nguyen Viet Q.
LandOfFree
Semiconductor memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3859049