Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

1981-11-13

1984-03-13

Fears, Terrell W.

Static information storage and retrieval

Systems using particular element

Semiconductive

365185, 365218, 357 41, G11C 1140

Patent

active

044371721

ABSTRACT:
A semiconductor memory device constituted by an MOS transistor which has a control gate and a floating gate capable of storing data. An erase gate is further provided to discharge electrons from the floating gate by field emission. The semiconductor memory device is further provided with a first voltage supply circuit for supplying a voltage of high level for erasing the data to the erase gate and a second voltage supply circuit for supplying a voltage of low level to the control gate.

REFERENCES:
patent: 4119995 (1978-10-01), Simko
patent: 4203158 (1980-05-01), Frohman-Bentchkowsky et al.
IBM Technical Disclosure Bulletin, Hoffman, Nov. 1979, "Floating Gate Nonvolatile Memory Cell" vol. 22, #6, pp. 2403-2404.
IEEE Transactions on Electron Devices, Gerber, Jul. 1980, "Low Voltage Single Supply CMOS Electrically Erasable Read-Only Memory".
1980 IEEE International Solid-State Circuit Conference 152 (Feb. 1980), A 16Kb Electrically Erasable Nonvolatile Memory.

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