Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

2007-02-27

2007-02-27

Zarabian, Amir (Department: 2827)

Static information storage and retrieval

Systems using particular element

Resistive

C365S046000, C365S072000, C365S163000, C365S182000

Reexamination Certificate

active

11165404

ABSTRACT:
A semiconductor memory includes: a first node and a second node; a first MIS transistor, having first conductive carrier flows, including a source electrode connected to a first power supply, a drain electrode connected to the second node, and a gate electrode connected to the first node; a second MIS transistor, having second conductive carrier flows, including a source electrode connected to a second power supply, a drain electrode connected to the second node, and a gate electrode connected to the first node; and a resistance change element connected between the first node and the second node and having a variable resistance due to the direction in which a voltage is applied, wherein information is written in the resistance change element by applying a voltage between the first and the second node, and stored information is read out by applying a low or high input voltage to the first node and reading out a voltage difference in the second node.

REFERENCES:
patent: 7123535 (2006-10-01), Kurotsuchi et al.
patent: 2006/0098473 (2006-05-01), Yasuda
patent: 2003-323791 (2003-11-01), None
T. Sakamoto et al., “Reproducible Current Switching in Copper Sulfide Films”, Extended Abstracts of the 2002 International Conference on Solid State Devices and Materials, Nagoya, (2002), pp. 264-265.
T. Sakamoto et al., “A Nonvolatile Programmable Solid Electrolyte Nanometer Switch”, 2004 IEEE International Solid-State Circuits Conference, Session 16, TD: Emerging Technologies and Circuits, 16.3, (Jun. 2004), 10 sheets.

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