Static information storage and retrieval – Read/write circuit – Bad bit
Reexamination Certificate
2007-10-23
2007-10-23
Phung, Anh (Department: 2824)
Static information storage and retrieval
Read/write circuit
Bad bit
C365S189090
Reexamination Certificate
active
11488053
ABSTRACT:
A semiconductor memory device including: a memory cell array with electrically rewritable and non-volatile memory cells arranged therein; a sense amplifier circuit configured to read data of the memory cell array; first data hold circuits configured to hold data for designating whether each column of the memory cell array is defective or not; and a second data hold circuit configured to hold data read out of the first data hold circuits, and to control skipping a defective column address of the memory cell array in accordance with the data read out of the first data hold circuit.
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Kabushiki Kaisha Toshiba
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Phung Anh
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