Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

2007-10-09

2007-10-09

Phung, Anh (Department: 2824)

Static information storage and retrieval

Systems using particular element

Capacitors

C365S207000

Reexamination Certificate

active

11360681

ABSTRACT:
A memory cell MC includes nMOS transistors for a transfer gate configured to be paired with each other, and one capacitor for data storage connected to the nMOS transistor. A gate electrode of the nMOS transistor is connected to a word line WL, and a drain is connected to a bit line BL. A gate electrode of the nMOS transistor is connected to a word line /WL, and a drain and a source are connected to a ground. The capacitor is connected between a source of the nMOS transistor and the ground. A Y selector circuit is connected between a differential bit line BL, /BL and a differential data line DL, /DL. The Y selector circuit has two pairs of nMOS transistors configured to be paired transistors, respectively.

REFERENCES:
patent: 6504741 (2003-01-01), Ema
patent: 6731153 (2004-05-01), Otsuka et al.
patent: 6845033 (2005-01-01), Kirihata et al.
patent: 2003/0193824 (2003-10-01), Tsukikawa et al.
patent: 2002-124635 (2002-04-01), None
Bunch, R. L. et al., “Large-Signal Analysis of MOS Varactors in CMOS -GmLC VCOs,” IEEE Journal of Solid-State Circuits, vol. 38, No. 8, pp. 1325-1332, (Aug. 2003).
Yang, B. D. et al., “A Low-Power Charge-Recycling ROM Architecture,” IEEE Transactions of Very Large Scale Integration (VLSI) Systems, vol. 11, No. 4, pp. 590-600, (Aug. 2003).
Koh, K. J. et al., “Subharmonically Pumped CMOS Frequency Conversion (Up and Down) Circuits for 2-GHz WCDMA Direct-Conversion Transceiver,” IEEE Journal of Solid-State Circuits, vol. 39, No. 6, pp. 871-884, (Jun. 2004).

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