Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

2007-01-02

2007-01-02

Nguyen, Tan T. (Department: 2827)

Static information storage and retrieval

Read/write circuit

Including level shift or pull-up circuit

C365S189090, C365S226000

Reexamination Certificate

active

11006588

ABSTRACT:
In order to decrease the circuit scale of a power supply circuit and the area occupied by the power supply circuit over a semiconductor substrate, the power supply circuit, which supplies a supply voltage to respective parts of a memory circuit, includes a word driver power supply (first power supply circuit), a sense amplifier power supply (second power supply circuit), a bit line precharge power supply, a cell plate power supply, a substrate bias power supply, and a word line bias power supply. The word driver power supply supplies a word driver with a voltage generated by directly increasing an external supply voltage, whereas the other power supplies (e.g., the sense amplifier power supply) supply a sense amplifier, etc., with a voltage generated by decreasing the external supply voltage.

REFERENCES:
patent: 5475646 (1995-12-01), Ogihara
patent: 5872737 (1999-02-01), Tsuruda et al.
patent: 5896320 (1999-04-01), Taguchi
patent: 6147916 (2000-11-01), Ogura
patent: 6335893 (2002-01-01), Tanaka et al.
patent: 6373763 (2002-04-01), Taito et al.
patent: 6449208 (2002-09-01), Kono et al.
patent: 6-140889 (1994-05-01), None

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