Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

2007-03-20

2007-03-20

Mai, Son (Department: 2827)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S149000, C365S201000

Reexamination Certificate

active

11319365

ABSTRACT:
To shorten the time of a test for detecting deteriorated capacitors, a semiconductor memory device having a 2T2C type memory cell structure is designed in such a way that a voltage VBL of a bit line pair which determines a voltage to be applied to ferroelectric memory cells and a voltage VPL of plate lines are so set as to satisfy a relationship of VBL=VPL<VDD where VDD is a supply voltage. This makes the size of the hysteresis loop of the ferroelectric capacitors smaller than that in case of VBL=VPL=VDD, a potential difference ΔV between data “0” and data “1” can be made smaller than an operational margin of a sense amplifier. This makes it possible to detect a deteriorated ferroelectric capacitor without conducting a cycling test.

REFERENCES:
patent: 5381364 (1995-01-01), Chern et al.
patent: 5532953 (1996-07-01), Ruesch et al.
patent: 5815430 (1998-09-01), Verhaeghe et al.
patent: 6046926 (2000-04-01), Tanaka et al.
patent: 6233170 (2001-05-01), Yamada
patent: 6288950 (2001-09-01), Koike
patent: 6335876 (2002-01-01), Shuto
patent: 6396730 (2002-05-01), Lin et al.
patent: 6611450 (2003-08-01), Oowaki et al.
patent: 6646905 (2003-11-01), Tada
patent: 6680861 (2004-01-01), Kasai
patent: 6707704 (2004-03-01), Kato et al.
patent: 6795331 (2004-09-01), Noro
patent: 6801447 (2004-10-01), Murakuki
patent: 6819601 (2004-11-01), Eliason et al.
patent: 6826099 (2004-11-01), Joachim et al.
patent: 6922799 (2005-07-01), Koike
patent: 2002/0031004 (2002-03-01), Miyamoto
patent: 2003/0193823 (2003-10-01), Takahashi
patent: 2001-338499 (2001-12-01), None
“Low-power High-speed LSI Circuits & Technology” (pp. 231-250, published on Jan. 31, 1998 by Realize Corporation).
“Unerasable IC Memory—All About Fram” (pp. 29-37, published on Jul. 9, 1996 by Kogyo Chosakai Publishing Co., Ltd).

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