Semiconductor memory device

Static information storage and retrieval – Read/write circuit – Noise suppression

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C365S189060, C365S214000, C365S230060, C365S244000

Reexamination Certificate

active

10933290

ABSTRACT:
When a command is input to a semiconductor memory device, a sub-threshold current is reduced to a predetermined value corresponding to the command. After the reduction of the sub-threshold current is completed, the semiconductor memory device starts to operate corresponding to the command.

REFERENCES:
patent: 5241503 (1993-08-01), Cheng
patent: 6134171 (2000-10-01), Yamagata et al.
patent: 6137730 (2000-10-01), Chien
patent: 6163493 (2000-12-01), Yamagata et al.
patent: 6262585 (2001-07-01), Frodsham et al.
patent: 6480437 (2002-11-01), Kato et al.
patent: 6668345 (2003-12-01), Ooishi et al.
patent: 2001/0052792 (2001-12-01), Ooishi et al.
patent: 2002/0000624 (2002-01-01), Takemura et al.
patent: 2003/0112652 (2003-06-01), Shimada et al.
patent: 2004/0001362 (2004-01-01), Muira
patent: 2005/0073903 (2005-04-01), Fujioka et al.
patent: 11087649 (1999-03-01), None
patent: 2000-30443 (2000-01-01), None
patent: 2000-113670 (2000-04-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3784488

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.