Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

2007-07-03

2007-07-03

Le, Thong Q. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S189090, C365S196000, C365S148000

Reexamination Certificate

active

11154376

ABSTRACT:
A semiconductor memory device having a crosspoint-type memory cell array includes a column readout voltage supply circuit12which supplies a predetermined first voltage when readout is selected, and supplies a second voltage different from the first voltage when the readout is not selected, to each of column selection lines BL, a row readout voltage supply circuit11which supplies the second voltage to each of row selection lines DL at the time of readout, a sense circuit15which senses a current flowing in the selected row selection line DL separately from a current flowing in the unselected row selection lines DL and senses an electric resistance state of the selected memory cell at the time of readout, and a row voltage displacement prevention circuit31which prevents a displacement in a supplied voltage level in at least selected row selection line DL at the time of readout.

REFERENCES:
patent: 6456525 (2002-09-01), Perner et al.
patent: 6862213 (2005-03-01), Hamaguchi
patent: 2002-8369 (2002-01-01), None

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