Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

2007-07-24

2007-07-24

Baumeister, B. William (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S306000, C257SE21648, C257SE21660

Reexamination Certificate

active

11202069

ABSTRACT:
A semiconductor memory device having a transistor formed on a semiconductor substrate and a capacitor formed on the upper layer of the transistor and electrically connected to the transistor, includes: a cell contact which is formed on a first interlayer insulation film covering the transistor and is electrically connected to the transistor; a bit contact which is formed on a second interlayer insulation film provided on the first interlayer insulation film and is electrically connected to the cell contact; a bit line which is formed on the second interlayer insulation film and is connected to the bit contact; a capacitor which is formed on a third interlayer insulation film covering the bit line; a capacitor contact which is formed through the third and second interlayer insulation film and makes a connection between the capacitor and the cell contact; and a side wall which has an etching selectivity with the second and third interlayer insulation films formed on the surface of the bit line.

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