Static information storage and retrieval – Read/write circuit – Data refresh
Reexamination Certificate
2007-09-04
2007-09-04
Phung, Anh (Department: 2824)
Static information storage and retrieval
Read/write circuit
Data refresh
C365S201000
Reexamination Certificate
active
11323359
ABSTRACT:
A semiconductor memory device is provided. The semiconductor memory device includes: an oscillation means for generating a self-refresh enable signal and a self-refresh period pulse having a predetermined period in response to a self-refresh signal; a shift register for generating a self-refresh period level signal maintaining a different level at every self-refresh period defined by the self-refresh enable signal and the self-refresh period pulse, in response to a test mode signal; a multiplexing means for selectively outputting a data signal and the self-refresh period level signal in response to the test mode signal; and an output buffer for buffering the output signal of the multiplexing means to output the buffered signal.
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Blakely & Sokoloff, Taylor & Zafman
Hynix / Semiconductor Inc.
Phung Anh
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