Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

2007-09-11

2007-09-11

Purvis, Sue A. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S324000, C257S296000, C257S341000, C257SE21680

Reexamination Certificate

active

10892553

ABSTRACT:
A semiconductor memory device comprises diffusion regions, a floating gate, a third diffusion region, a selection gate electrode, and a control gate electrode that three-dimensionally crosses the selection gate electrode and extends in a direction orthogonal to the selection gate electrode are included. A channel formed immediately below the selection gate and which constitutes a passage connecting the two diffusion regions has a shape in a top view, including a first path extending in one direction, from one diffusion region, and a second path extending from the end of the first path to the other diffusion region in a direction orthogonal to a first direction.

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Hideto Tomiye, et al., “A novel 2-bit/cell MONOS memory device with a wrapped-control-gate structure that applies source-side hot-electron injection”, 2002 Symposium on VLSI Technology Digest of a Technical Papers, pp. 206-207.

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