Semiconductor memory device

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S303000

Reexamination Certificate

active

06995413

ABSTRACT:
A semiconductor memory device having a transistor and a capacitor electrically connected to the transistor, the semiconductor memory device comprising: a first interlayer insulation film covering said transistor; a metallic cell contact passing through said first interlayer insulation film, said cell contact being electrically connected to said transistor; at least one interlayer insulation film located above said first interlayer insulation film; a capacitor located above said first interlayer insulation film; and a capacitor contact passing through said at least one interlayer insulation film, said capacitor contact electrically connecting said capacitor with said cell contact.

REFERENCES:
patent: 5956594 (1999-09-01), Yang et al.
patent: 6037215 (2000-03-01), Lee et al.
patent: 6051462 (2000-04-01), Ohno
patent: 6127260 (2000-10-01), Huang
patent: 6177307 (2001-01-01), Tu et al.
patent: 6200855 (2001-03-01), Lee
patent: 6274470 (2001-08-01), Ichimori et al.
patent: 6461911 (2002-10-01), Ahn et al.
patent: 6472754 (2002-10-01), Nakajima et al.

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