Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

2006-11-07

2006-11-07

Nguyen, Tan T. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S189070

Reexamination Certificate

active

07133305

ABSTRACT:
A semiconductor memory device capable of suppressing size increase and reducing the operating time is provided. This semiconductor memory device comprises storage portion, connected to a data read line, containing a material having a hysteresis property and data read portion connected to the data read line for reading data stored in the storage portion, for supplying prescribed energy capable of changing a storage state of the storage portion from an initial state supplying no prescribed energy and thereafter returning the intensity of the energy to a level not changing the storage state for reading the data with the data read portion on the basis of the current state of the data read line and the state of the data read line in the initial state in data reading.

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Yeonbae Chung et al., “A 3.3-V 4-Mb Nonvolatile Ferroelectric RAM with a Selectively-Drive Double-Pulsed Plate Read/Write-Back Scheme,” 1999 Symposium on VLSI Circuits Digest of Technical Papers, Jun. 17-19, 1999/Kyoto, 4-930813-95-6/99, pp: cover, x, 97-98.
Noboru Sakimura et al., “A 512Kb Cross-Point Cell MRAM,” 2003 IEEE International Solid-State Circuits Conference, 0-7803-7707-9/03, ISSCC 2003/Session 16/Non-Volatile Memory/Paper 16.1, pp. 15-16, Figures 16.1.1-16.1.5.

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