Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

2006-10-03

2006-10-03

Mai, Son (Department: 2827)

Static information storage and retrieval

Systems using particular element

Flip-flop

C365S154000, C365S190000

Reexamination Certificate

active

07116574

ABSTRACT:
A semiconductor memory device includes first and second bit lines, memory cells each including first and second storage nodes, which are connected through selecting transistors to the first and second bit lines, respectively, a pre-charge circuit configured to pre-charge the first and second bit lines to a predetermined potential so as to read data, a hold circuit configured to maintain a potential level of the first and second bit lines, a read circuit connected to the first bit line, and a leak circuit having one terminal connected to the second bit line and another terminal connected to a ground. The leak circuit allows a current to leak from the second bit line.

REFERENCES:
patent: 5864511 (1999-01-01), Sato
patent: 6504784 (2003-01-01), Kokubo
patent: 6515887 (2003-02-01), Fujimoto
patent: 6567326 (2003-05-01), Nakazato et al.
patent: 6801463 (2004-10-01), Khellah et al.

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