Static information storage and retrieval – Read/write circuit – Including signal comparison
Reexamination Certificate
2006-04-11
2006-04-11
Le, Thong Q. (Department: 2827)
Static information storage and retrieval
Read/write circuit
Including signal comparison
C365S207000
Reexamination Certificate
active
07027334
ABSTRACT:
A semiconductor memory device includes: a device substrate having a semiconductor layer separated by a dielectric layer from a base substrate; a memory cell array having a plurality of memory cells formed and arranged on the semiconductor layer of the device substrate, each the memory cell having a MOS transistor structure with a body in an electrically floating state to store data based on a majority carrier accumulation state of the body; and a sense amplifier circuit configured to read out data of a selected memory cell in the memory cell array to store the read data in a data latch, then transfer the read data to an output circuit and write back the read data into the selected memory cell.
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Fujita Katsuyuki
Ikehashi Tamio
Ohsawa Takashi
Kabushiki Kaisha Toshiba
Le Thong Q.
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
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