Static information storage and retrieval – Read/write circuit – Testing
Reexamination Certificate
2006-07-11
2006-07-11
Elms, Richard (Department: 2824)
Static information storage and retrieval
Read/write circuit
Testing
C365S185260
Reexamination Certificate
active
07075839
ABSTRACT:
A memory cell array includes a memory cell region composed of memory cells and a sample cell region composed of word line sample cells and bit line sample cells. The word line sample cell and the bit line sample cell are formed so that by a voltage applied to word lines and bit lines, charge transfer from the floating gate electrode occurs more easily than the memory cell.
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Mukunoki Toshio
Ozeki Takao
Sugimoto Akira
Elms Richard
Matsushita Electric - Industrial Co., Ltd.
McDermott Will & Emery LLP
Wendler Eric J.
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