Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

2006-01-03

2006-01-03

Hoang, Huan (Department: 2827)

Static information storage and retrieval

Systems using particular element

Flip-flop

C365S156000, C365S203000, C365S202000, C365S230060

Reexamination Certificate

active

06982899

ABSTRACT:
A dummy bit line is provided between a pair of bit lines. The pair of bit lines is set at a power supply voltage and the dummy bit line is set at a ground voltage, and then the pair of bit lines and the dummy bit line are equalized. When a word line is activated in subsequent read operation, the pair of bit lines is at an intermediate potential lower than the power supply voltage, so that an apparent current drive capability of an access transistor decreases, and the static noise margin of a memory cell increases.

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patent: 2003/0031044 (2003-02-01), Higeta et al.
patent: 2002-42476 (2002-02-01), None

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