Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

2006-01-24

2006-01-24

Hoang, Huan (Department: 2827)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S230030, C365S205000

Reexamination Certificate

active

06990007

ABSTRACT:
A semiconductor memory device includes a first cell group having serial-connected memory cells. The memory cell includes a ferroelectric capacitor and a transistor which are connected in parallel. A first bit line is selectively electrically connected to one end of the first cell group. A second bit line is selectively electrically connected to the other end of the first cell group. A first power supply connection circuit selectively electrically connects a power supply line having a first potential to the second bit line. A sense amplifier has a first terminal electrically connected to the first bit line, generates one of first and second potentials onto the first terminal according to data stored in the memory cell and generates the other one of the first and second potentials onto a second terminal thereof. A first bit line connection circuit selectively electrically connects the second terminal to the second bit line.

REFERENCES:
patent: 6198653 (2001-03-01), Tanaka
patent: 6498743 (2002-12-01), Maruyama
patent: 6934177 (2005-08-01), Takashima

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