Static information storage and retrieval – Read/write circuit – Flip-flop used for sensing
Reexamination Certificate
2006-09-05
2006-09-05
Phung, Anh (Department: 2824)
Static information storage and retrieval
Read/write circuit
Flip-flop used for sensing
C365S207000, C365S203000
Reexamination Certificate
active
07102947
ABSTRACT:
A semiconductor memory device includes a memory cell array which has a plurality of memory cells, a plurality of first bit line pairs which transfer data among the memory cells, a plurality of second bit line pairs disposed corresponding to the plurality of first bit line pairs, a plurality of variable resistance elements disposed to connect the plurality of first bit line pairs to the plurality of second bit line pairs, a plurality of data line pairs disposed corresponding to the plurality of second bit line pairs, a plurality of input/output gates which transfer data between the plurality of second bit line pairs and the plurality of data line pairs, a plurality of sense amplifier circuits which amplify data transferred to the plurality of second bit line pairs, and a bit line isolation control circuit which controls resistance values of the plurality of variable resistance elements.
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Kajitani Yasuyuki
Kato Daisuke
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