Semiconductor memory device

Static information storage and retrieval – Read/write circuit – Flip-flop used for sensing

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

365208, G11C 700

Patent

active

056108680

ABSTRACT:
Disclosed is a semiconductor memory device which comprises a plurality of word lines, a plurality of bit line pairs disposed in a manner as to intersect the word lines and each having first and second bit lines, and a memory cell array having a plurality of memory cells provided at intersection areas between the plurality of bit line pairs and the plurality of word lines and each consisting of one transistor and one capacitor. The gates of the transistors are connected to the word lines, the drains thereof are connected to the first bit lines, and the sources thereof are connected to first terminals of the capacitors, second terminals of which are connected to second bit lines, thereby, at a sensing time, the amplitude of a bit line potential is set to be 1/3 or less of a difference between prescribed first and second potentials, whereupon variations in potential of the first terminal of the capacitor of the memory cell are kept within a range of between the first potential and the second potential.

REFERENCES:
patent: 5274598 (1993-12-01), Fujii et al.
patent: 5353255 (1994-10-01), Komuro
patent: 5430672 (1995-07-01), Kuwabara et al.
Yoshiji Ohta, et al., "A Novel Memory Cell Architecture for High-Density DRAMs", 1989 Symposium on VLSI Circuits Digest of Technical Papers, (pp. 101-102), May 25-27, 1989.
Mikio Asakura, et al., "Cell-Plate Line Connecting Complementary Bitline (C.sup.3) Architecture for Battery Operating DRAMs", 1991 Symposium on VLSI Circuits Digest of Technical Papers, (pp. 59-60), May 30-Jun. 1, 1991.
W. H. Henkels, et al., "Large-Signal 2T, 1C DRAM Cell: Signal and Layout Analysis", IEEE Journal of Solid-State Circuits, vol. 29, No. 7, (pp. 829-832), Jul. 1994.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-449053

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.