Static information storage and retrieval – Read/write circuit – Including reference or bias voltage generator
Reexamination Certificate
2005-12-27
2005-12-27
Nguyen, Tan T. (Department: 2827)
Static information storage and retrieval
Read/write circuit
Including reference or bias voltage generator
C365S201000, C365S200000
Reexamination Certificate
active
06980475
ABSTRACT:
A semiconductor memory device has an external terminal receptive of a voltage for switching an operation mode. A protective transistor is connected between the external terminal and a ground. The protective transistor has a drain region and a gate electrode surrounding the drain region. A voltage detection circuit detects a voltage of the external terminal and outputs a switching signal for switching a first operation mode to a second operation mode when a value of the detected voltage is equal to or higher than a preselected voltage value.
REFERENCES:
patent: 4321489 (1982-03-01), Higuchi et al.
patent: 6081460 (2000-06-01), Lim et al.
patent: 6081466 (2000-06-01), McClure et al.
patent: 6333880 (2001-12-01), Mitsui
patent: 6791894 (2004-09-01), Nagai et al.
Adams & Wilks
Nguyen Tan T.
Seiko Instruments Inc.
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