Semiconductor memory device

Static information storage and retrieval – Read/write circuit – Including reference or bias voltage generator

Reexamination Certificate

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C365S201000, C365S200000

Reexamination Certificate

active

06980475

ABSTRACT:
A semiconductor memory device has an external terminal receptive of a voltage for switching an operation mode. A protective transistor is connected between the external terminal and a ground. The protective transistor has a drain region and a gate electrode surrounding the drain region. A voltage detection circuit detects a voltage of the external terminal and outputs a switching signal for switching a first operation mode to a second operation mode when a value of the detected voltage is equal to or higher than a preselected voltage value.

REFERENCES:
patent: 4321489 (1982-03-01), Higuchi et al.
patent: 6081460 (2000-06-01), Lim et al.
patent: 6081466 (2000-06-01), McClure et al.
patent: 6333880 (2001-12-01), Mitsui
patent: 6791894 (2004-09-01), Nagai et al.

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