Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

2005-06-07

2005-06-07

Hoang, Huan (Department: 2827)

Static information storage and retrieval

Read/write circuit

Flip-flop used for sensing

C365S203000, C365S202000

Reexamination Certificate

active

06903988

ABSTRACT:
The present invention relates to a semiconductor memory device. A voltage generator for supplying a sense amplifier I/O voltage (VSIO) and a voltage generator for supplying a bit line precharge voltage (VBLP) are independently separated. It is possible to prevent the bit line precharge voltage (VBLP) from increasing when the sense amplifier I/O voltage (VSIO) is increased due to the introduction of a column reset voltage (VCORE).

REFERENCES:
patent: 5905685 (1999-05-01), Nakamura et al.
patent: 6545897 (2003-04-01), Fujisawa et al.

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