Semiconductor memory device

Static information storage and retrieval – Read/write circuit – Data refresh

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C365S230060, C365S230080

Reexamination Certificate

active

06917553

ABSTRACT:
In a semiconductor memory device equipped with a memory cell array in which dynamic memory cells are arrayed, for example, in a matrix, a technique speeds up of a read operation. In the read cycle, an external access controller outputs an external access execution timing signal which changes to active after the change of the output enable signal to active, and changes to inactive after a start of the latch of the read signal caused by changes of the latch signal to active and inactive. In the read cycle, the refresh controller outputs the refresh execution timing signal which changes to active according to the change of the latch signal to active while the refresh requirement signal is active, and stays active for a predetermined time period.

REFERENCES:
patent: 6288728 (2001-09-01), Satoh et al.
patent: 6336180 (2002-01-01), Long et al.
patent: 6421754 (2002-07-01), Kau et al.
patent: 6597615 (2003-07-01), Mizugaki
patent: a 2002-74945 (2002-03-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3423689

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.