Static information storage and retrieval – Read/write circuit – Data refresh
Reexamination Certificate
2005-07-12
2005-07-12
Auduong, Gene N. (Department: 2818)
Static information storage and retrieval
Read/write circuit
Data refresh
C365S230060, C365S230080
Reexamination Certificate
active
06917553
ABSTRACT:
In a semiconductor memory device equipped with a memory cell array in which dynamic memory cells are arrayed, for example, in a matrix, a technique speeds up of a read operation. In the read cycle, an external access controller outputs an external access execution timing signal which changes to active after the change of the output enable signal to active, and changes to inactive after a start of the latch of the read signal caused by changes of the latch signal to active and inactive. In the read cycle, the refresh controller outputs the refresh execution timing signal which changes to active according to the change of the latch signal to active while the refresh requirement signal is active, and stays active for a predetermined time period.
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patent: 6421754 (2002-07-01), Kau et al.
patent: 6597615 (2003-07-01), Mizugaki
patent: a 2002-74945 (2002-03-01), None
Mizugaki Koichi
Otsuka Eitaro
Auduong Gene N.
Oliff & Berridg,e PLC
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