Static information storage and retrieval – Systems using particular element – Ferroelectric
Reexamination Certificate
2005-05-10
2005-05-10
Nguyen, Van Thu (Department: 2824)
Static information storage and retrieval
Systems using particular element
Ferroelectric
C365S174000, C365S173000
Reexamination Certificate
active
06891742
ABSTRACT:
A semiconductor memory device having a first memory including a bit line, a word line arranged to intersect with the bit line and a storage unit arranged between the bit line and the word line, and a second memory different in type from the first memory. The first memory and the second memory are formed on a semiconductor substrate in a stacked manner reducing the thickness in the height direction and attaining further miniaturization (thinning). Further, no wire having a large parasitic capacitance or solder is employed for connecting the first memory and the second memory, thereby enabling high-speed data transfer between the first memory and the second memory.
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Matsushita Shigeharu
Takano Yoh
Arent Fox PLLC.
Luu Pho M.
Nguyen Van Thu
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