Semiconductor memory device

Static information storage and retrieval – Systems using particular element – Semiconductive

Reexamination Certificate

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C365S177000, C365S072000

Reexamination Certificate

active

06882576

ABSTRACT:
A semiconductor memory device includes a memory cell array in which memory cells each having six transistors11a,11b,12a,12b,13aand13bare arranged two-dimensionally on a semiconductor substrate. The semiconductor memory device also includes a plurality of word lines connected to each of the memory cells, and arranged on a parallel to each other along a first direction, a plurality of bit lines connected to each of the memory cells and arranged on a parallel to each other along a second direction perpendicular to the first direction, and at least two gate electrodes provided on the semiconductor substrate such that each of the gate electrodes is connected to at least one transistor of the six transistors, all of the gate electrodes3a,3b,3cand3dbeing arranged on the same straight line parallel to the first direction.

REFERENCES:
patent: 5541427 (1996-07-01), Chappell et al.
patent: 5732023 (1998-03-01), Roberts
patent: 5744844 (1998-04-01), Higuchi
patent: 5930163 (1999-07-01), Hara et al.
patent: 9-270468 (1997-10-01), None
patent: 10-178110 (1998-06-01), None

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