Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

2005-03-01

2005-03-01

Nelms, David (Department: 2818)

Static information storage and retrieval

Systems using particular element

Capacitors

C365S222000, C365S187000, C365S202000, C365S207000, C365S233100

Reexamination Certificate

active

06862205

ABSTRACT:
The semiconductor memory device includes: a memory cell including a capacitor having a charge storage node and a first MIS transistor and a second MIS transistor each having a source connected to the charge storage node; a first word line and a first bit line respectively connected to the gate and the drain of the first MIS transistor; a second word line and a second bit line respectively connected to the gate and the drain of the second MIS transistor; and a timer circuit for generating a periodic signal having a predetermined period. The first word line or the second word line is activated in response to the periodic signal.

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