Semiconductor memory device

Static information storage and retrieval – Systems using particular element – Capacitors

Reexamination Certificate

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C365S222000, C365S190000

Reexamination Certificate

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06845035

ABSTRACT:
A semiconductor memory device uses memory cells, which have structures not increasing areas, and are arranged in a distinctive manner providing high data holding stability.A semiconductor memory device includes memory cells formed on a main surface of a semiconductor substrate, and each having first and second transistors each having a gate electrode and impurity regions forming source/drain as well as one capacitor; and bit and word lines for controlling an operation of the memory cells, a cell plate forming an electrode of the capacitor being formed of the same layer as the gate electrode.

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patent: 5357460 (1994-10-01), Yusuki et al.
patent: 5822258 (1998-10-01), Casper
patent: 6066525 (2000-05-01), Liu et al.
patent: 6388934 (2002-05-01), Tobita
patent: 6-244379 (1994-09-01), None
patent: 2000-124331 (2000-04-01), None

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