Semiconductor memory device

Static information storage and retrieval – Read/write circuit – Flip-flop used for sensing

Reexamination Certificate

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Reexamination Certificate

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06917550

ABSTRACT:
A semiconductor memory device includes a pair of bit lines; a first sense amplifier coupled to the pair of bit lines; and a first controller, which controls the first sense amplifier. The first sense amplifier includes a flip-flop circuit having a pair of NMOS transistors and a pair of PMOS transistors; a first transistor connected to a source terminal of the NMOS transistors in the flip-flop circuit; and a second transistor connected to a source terminal of the PMOS transistors in the flip-flop circuit. The first controller includes a first NOR circuit, having input terminals to which a write command signal and a sense amplifier driving signal are supplied and having an output terminal connected to a gate of the first transistor.

REFERENCES:
patent: 5608674 (1997-03-01), Yabe et al.
patent: 6256246 (2001-07-01), Ooishi
patent: 05-036277 (1993-02-01), None
patent: 2000-298984 (2000-10-01), None

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