Static information storage and retrieval – Read/write circuit – Including signal comparison
Reexamination Certificate
2005-01-25
2005-01-25
Hoang, Huan (Department: 2818)
Static information storage and retrieval
Read/write circuit
Including signal comparison
C365S210130, C365S233500, C365S236000
Reexamination Certificate
active
06847561
ABSTRACT:
A semiconductor memory device includes (a) a plurality of reference cells, (b) a plurality of memory cells, data stored in a selected reference cell among the reference cells being compared to data stored in a selected memory cell among the memory cells, (c) an address transition detector for detecting transition in input of addresses by which a memory cell is selected among the memory cells, and transmitting an address transition detecting signal indicative of the detected transition, (d) a counter for counting the address transition detecting signals, and (e) a reference cell decoder for selecting a reference cell among the reference cells in accordance with an output transmitted from the counter.
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Furuta Hiroshi
Hashimoto Kiyokazu
Hoang Huan
NEC Electronics Corporation
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