Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

2005-03-15

2005-03-15

Ho, Hoai (Department: 2818)

Static information storage and retrieval

Systems using particular element

Flip-flop

C365S230050, C365S042000, C365S042000, C257S200000, C257S321000, C257S369000

Reexamination Certificate

active

06868001

ABSTRACT:
With a P well region being divided, NMOS transistors N1and N3are formed in the first P well region, and NMOS transistors N2and N4in the second P well region. Alternatively, with a N well region being divided, PMOS transistor P1is formed in the first N well region, and PMOS transistor P2in the second N well region.

REFERENCES:
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patent: 2000-36543 (2000-02-01), None
patent: 2000-036543 (2000-02-01), None
patent: 2001-28401 (2001-01-01), None

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