Static information storage and retrieval – Read/write circuit – Data refresh
Reexamination Certificate
2005-09-27
2005-09-27
Nguyen, Tan T. (Department: 2827)
Static information storage and retrieval
Read/write circuit
Data refresh
C365S230030
Reexamination Certificate
active
06950363
ABSTRACT:
A semiconductor memory device which can reduce the frequency of a CBR (column before row) refresh operation comprises a memory cell array having a plurality of memory cells, and a CBR refresh unit responsive to m receptions of CBR refresh commands for performing a refresh operation once for the memory cell array.
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Elpida Memory Inc.
McGinn & Gibb PLLC
Nguyen Tan T.
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