Static information storage and retrieval – Read/write circuit – Data refresh
Patent
1987-12-01
1989-05-02
Popek, Joseph A.
Static information storage and retrieval
Read/write circuit
Data refresh
G11C 700
Patent
active
048274534
ABSTRACT:
A semiconductor memory control circuit separates an externally input operation activation signal from an operation activation signal which is transferred inside a memory, and activates the internal operation activation signal only for a predetermined period of time. This predetermined period is determined in accordance with the cycle time required to achieve refreshment of a memory cell after the external operation activation signal is activated. Thereafter, even if the external operation activation signal is in an activated state, the internal operation activation signal is inactivated. When the internal operation activation signal is in the activated state and the external operation activation signal is inactivated, the internal operation activation signal is inactivated, in accordance with activation of the external operation activation signal.
REFERENCES:
patent: 4334295 (1982-06-01), Nagami
Minato et al., "A 20ns 64K CMOS SRAM," IEEE International Solid-State Circuits Conference, ISSCC Digest, pp. 222-223, Feb. 23, 1984.
Sakurai Takayasu
Sawada Kazuhiro
Kabushiki Kaisha Toshiba
Popek Joseph A.
LandOfFree
Semiconductor memory control circuit does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor memory control circuit, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory control circuit will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-590519