Semiconductor memory circuit having a fast read amplifier trista

Static information storage and retrieval – Read/write circuit – Differential sensing

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36518911, 307473, 307530, G11C 706

Patent

active

049107143

ABSTRACT:
A C-MOS semiconductor memory circuit includes a read amplifier and a tristate bus driver. The read amplifier is a two stage amplifier. The bit lines in the memory are connected via P-MOS pull-up transistors to the supply voltage. The logic low level is 1 Volt below the supply voltage. In order to bring the input signals for the difference amplifier at a most sensitive and fast level, a d.c.-shifting amplifier of the "emitter follower" type is connected between each input thereof and the associated bit line. The difference amplifier and the two follower amplifiers are activated only for a short period of time by means of a selection signal which gives a strong restriction in the power dissipation. The tristate driver comprises a push-pull output stage and an inverting AND gate which is controlled by the output of a difference amplifier and by an equalization signal which is also applied to the difference amplifier and therefore is of a simple design and gives only a low signal delay.

REFERENCES:
patent: 4270190 (1981-05-01), Jindra et al.
patent: 4280065 (1981-07-01), Minato et al.
patent: 4504748 (1985-03-01), Oritani

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