Semiconductor memory circuit

Static information storage and retrieval – Systems using particular element – Semiconductive

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365190, G11C 1140

Patent

active

044357877

ABSTRACT:
A semiconductor memory circuit is described for use in a memory array which is capable of permitting data contained in an entire column or in an entire row to be accessed simultaneously. The invented device improves upon the traditional memory circuit, which uses a single word line and two digit lines, by adding a second word line and a third digit line coupled through the gate and drain, respectively, of a transistor device. In a preferred embodiment, all the second word lines of each column are coupled in common to form a common second word line for each column, and all the third digit lines of each row are coupled in common to form a common third digit line for each row. When a signal of a high potential is coupled to the common second word line for a particular column, all the data contained in the memory circuits of that column appears on the common third digit lines.

REFERENCES:
patent: 3889287 (1975-06-01), Powell
"Semiconductor Memories", Digest of Technical Papers, pp. 40-41, Wed., Feb. 19, 1969, 1969 IEEE International Solid State Conference.

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