Static information storage and retrieval – Systems using particular element – Capacitors
Patent
1981-10-21
1984-07-03
Popek, Joseph A.
Static information storage and retrieval
Systems using particular element
Capacitors
365203, G11C 1140
Patent
active
044583362
ABSTRACT:
A semiconductor memory circuit is disclosed, which includes: word lines, bit lines and memory cells at each cross point of the word lines and the bit lines. Each memory cell including a capacitor, having a first electrode and a second electrode, and a transfer-gate transistor connected in series with the capacitor at the first electrode thereof. The memory circuit also includes pre-charge circuits each charging one corresponding bit line to a predetermined pre-charge voltage level by using a memory power source and sense amplifiers each amplifying the voltage level developed at one corresponding bit line so as to have a high voltage level or a low voltage level in accordance with the charge stored in each corresponding capacitor. Additionally included are a first circuit which supplies the pre-charge voltage to the pre-charge circuit, the level of the pre-charge voltage is in the middle between the high voltage level and the low voltage level, and a second circuit which supplies a predetermined voltage to the capacitor at its second electrode. Preferably the predetermined voltage supplied from the second circuit is same as the voltage supplied from the first circuit.
REFERENCES:
patent: 4045783 (1977-08-01), Harland
patent: 4195357 (1980-03-01), Kuo et al.
patent: 4291393 (1981-09-01), Wilson
Fujitsu Limited
Popek Joseph A.
LandOfFree
Semiconductor memory circuit does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor memory circuit, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory circuit will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1633911