Semiconductor memory cell with trench capacitor and...

Details Semiconductor memory cell with trench capacitor and... Semiconductor memory cell with trench capacitor and...

2006-05-23

2006-05-23

Kang, Donghee (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S300000, C257S302000, C257S303000, C257S304000, C438S242000, C438S243000, C438S244000, C438S253000

Reexamination Certificate

active

07049647

ABSTRACT:
A semiconductor memory cell is formed in a substrate and includes a trench capacitor and a selection transistor. The trench capacitor includes a capacitor dielectric and a conductive trench filling. Disposed on the conductive trench filling is a diffusion barrier on which an epitaxial layer is formed. The selection transistor is disposed as a planar transistor above the trench capacitor. A drain doping region of the selection transistor is disposed in the epitaxial layer.

REFERENCES:
patent: 4649625 (1987-03-01), Lu
patent: 5262002 (1993-11-01), Grewal et al.
patent: 5336629 (1994-08-01), Dhong et al.
patent: 5360758 (1994-11-01), Bronner et al.
patent: 5744386 (1998-04-01), Kenney
patent: 5867420 (1999-02-01), Alsmeier
patent: 5998821 (1999-12-01), Hieda et al.
patent: 6008104 (1999-12-01), Schrems
patent: 6207494 (2001-03-01), Graimann et al.
patent: 6297086 (2001-10-01), Hegde et al.
patent: 6352892 (2002-03-01), Jammy et al.
patent: 6452224 (2002-09-01), Mandelman et al.
patent: 6509599 (2003-01-01), Wurster et al.
patent: 6551398 (2003-04-01), Abe et al.
patent: 6565649 (2003-05-01), Mule′Stagno et al.
patent: 199 11 149 (2000-05-01), None
patent: 199 41 148 (2001-04-01), None
patent: 199 46 719 (2001-04-01), None
patent: 0 463 459 (1992-01-01), None
patent: 0 621 632 (1994-10-01), None
patent: 0 971 414 (2000-01-01), None
patent: 1 011 138 (2000-06-01), None
Silicon Processing for The Visi eRA, vol. 1, pp. 124, s. Wolf et al.
D. Widmann et al.: Technologie hochintegrierter Schaltungen [technology of high integrated circuits],Springer Verlag, Berlin, 2nded., 1996, pp. 44-48.
Stanley Wolf et al.: Silicon Processing for the VLSI Era vol. 1: Process Technology,Lattice Press, Sunset Beach, California, 1986, pp. 124-160.

Affiliated with

Also associated with

Rating

Semiconductor memory cell with trench capacitor and... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor memory cell with trench capacitor and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory cell with trench capacitor and... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3550650