Static information storage and retrieval – Systems using particular element – Capacitors
Patent
1996-01-18
1997-07-08
Nelms, David C.
Static information storage and retrieval
Systems using particular element
Capacitors
36518901, 36518911, G11C 1124
Patent
active
056468814
ABSTRACT:
In a DRAM cell, as a word line signal is applied to a gate of a MOS transistor, the MOS transistor writes the voltage applied to bit lines BL and BL into a capacitor. When a high level data is written, a voltage of the bit line BL or BL is increased to be higher than a power supply voltage, so as to permit reading of the data in a stable condition. When a capacitance value of the cell is the same as that of the conventional art, a refresh time of the present semiconductor memory, e.g., DRAM memory, is lengthened over that of the conventional art, whereas when the refresh time is the same as that of the conventional art, the capacitance value used in the present semiconductor memory can be reduced from that of the conventional art.
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Lee Yong-Bok
Park Yi Hwan
Shin Hyun Soo
LG Semicon Co. Ltd.
Nelms David C.
Nguyen Hien
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