Semiconductor memory cell including cross-coupled bipolar transi

Details Semiconductor memory cell including cross-coupled bipolar transi Semiconductor memory cell including cross-coupled bipolar transi

1984-01-11

1989-07-04

Popek, Joseph A.

Static information storage and retrieval

Systems using particular element

Flip-flop

365175, 365190, G11C 700

Patent

active

048456748

ABSTRACT:
A semiconductor memory cell includes cross coupled bipolar transistors operated in the forward current mode with power fed to the base of the transistor through Schottky diodes from separate word lines. Bit lines are connected to the transistors' emitters and a high differential current is sensed between the bit lines during read operations. No resistors are included within the cell.

REFERENCES:
patent: 3564300 (1971-02-01), Henle
patent: 3757313 (1973-09-01), Hines et al.
patent: 3764825 (1973-10-01), Stewart
patent: 3900838 (1975-08-01), Wiedmann
Wiedmann, "Monolithically Integrated Storage Cell", IBM Tech. Discl. Bull., vol. 22, No. 8A, Jan. 1980, pp. 3265-3267.
Moore, "Schottky Barrier Diode Storage Cell", IBM Technical Disclosure Bulletin, vol. 14, No. 6, Nov. 1971, p. 1683.
S. K. Wiedmann et al., Session XVII: Random Access Memories, 1980, IEEE International Solid-State Circuits Conference.

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