Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Recessed oxide by localized oxidation
Patent
1997-04-23
1999-09-07
Dang, Trung
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Recessed oxide by localized oxidation
438297, 438449, 438450, 438298, H01L 2176
Patent
active
059500956
ABSTRACT:
A semiconductor device includes a substrate having an active region between field oxide films, a gate formed on the substrate with a gate oxide therebetween, and a first impurity region formed adjacent to each side of the gate. A second impurity region is formed between the field oxide film and the first impurity region and a first insulating film with a contact hole exposes portions of the first and second impurity regions. An electrode formed in the contact hole such that the portions of the first and second impurity regions overlap an area in the substrate beneath the electrode. A method of forming an active region for a semiconductor device comprises the steps of: (a) forming a plurality of field oxide films in a prescribed pattern in x and y directions on a surface of a semiconductor substrate; (b) removing a bird beak portion of each of the plurality of field oxide films; and (c) doping a prescribed portion of an area of the semiconductor substrate, where each beak portion has been removed, with a prescribed concentration of a dopant.
REFERENCES:
patent: 5208470 (1993-05-01), Lee et al.
Dang Trung
LG Semicon Co. Ltd.
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