Semiconductor memory cell and process for formation thereof

Details Semiconductor memory cell and process for formation thereof Semiconductor memory cell and process for formation thereof

1996-10-15

1997-07-22

Clawson, Jr., Joseph E.

Static information storage and retrieval

Systems using particular element

Capacitors

365 63, 365 72, 257301, G11C 11404

Patent

active

056509570

ABSTRACT:
A semiconductor memory cell and a process for formation thereof is disclosed. A capacitor is disposed below a transistor, so that a DRAM cell that may be suitable for a high density semiconductor device is produced. A semiconductor device according to the present invention includes: a buried capacitor consisting of a storage electrode, a dielectric layer and a plate electrode formed on a substrate in a planar form; and a transistor formed above the capacitor, a source/drain region of the transistor being connected to the storage electrode of the capacitor.

REFERENCES:
patent: 4751557 (1988-06-01), Sunami et al.
patent: 4984038 (1991-01-01), Sunami et al.
patent: 5055898 (1991-10-01), Geilstein et al.
patent: 5113235 (1992-05-01), Tamakoshi
patent: 5272103 (1993-12-01), Nakamura
patent: 5281837 (1994-01-01), Kohyama
patent: 5292677 (1994-03-01), Dennison

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