Semiconductor memory cell and associated fabrication method

Details Semiconductor memory cell and associated fabrication method Semiconductor memory cell and associated fabrication method

2007-12-04

2007-12-04

Nguyen, Cuong (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

Reexamination Certificate

active

11039745

ABSTRACT:
A semiconductor memory cell and an associated fabrication method are provided in which a storage capacitor is connected to a selection transistor. The storage capacitor is formed in a trench of a semiconductor substrate. At the trench surface, a capacitor dielectric and an electrically conductive filling layer are formed thereon for realization of a capacitor counterelectrode. The filling layer has a projection that extends outside the trench as far as the drain region and is electrically connected thereto.

REFERENCES:
patent: 4577395 (1986-03-01), Shibata
patent: 4792834 (1988-12-01), Uchida
patent: 6225657 (2001-05-01), Saeki
patent: 6700154 (2004-03-01), Vidmantas et al.
patent: 0 149 799 (1988-03-01), None

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