Semiconductor memory cell

Details Semiconductor memory cell Semiconductor memory cell

1996-03-28

1997-11-04

Nelms, David C.

Static information storage and retrieval

Systems using particular element

Capacitors

365154, 365156, G11C 1124, G11C 1100

Patent

active

056847351

ABSTRACT:
A semiconductor memory cell comprising a capacitor for storing data thereon, and a first transistor being switched in response to a logic state of a word line. The first transistor writes data on a bit line into the capacitor, reads the data stored on the capacitor and transfers the read data to the bit line. The semiconductor memory cell further comprises a second transistor being switched in response to the logic state of the word line. The second transistor writes data on a bit line bar into the capacitor, reads the data stored on the capacitor and transfers the read data to the bit line bar. The semiconductor memory cell further comprises a transistor device for holding the data stored on the capacitor. According to the present invention, the semiconductor memory cell has a reduced number of devices as compared with a conventional one to enhance a chip integration degree. Also, the semiconductor memory cell prevents a current path from being formed therein to reduce its power consumption and compensates for a charge leakage to always hold its written data at a stabilized state with no loss.

REFERENCES:
patent: 4103342 (1978-07-01), Miersch et al.
patent: 4921813 (1990-05-01), Madan
patent: 5145799 (1992-09-01), Rodder
patent: 5452246 (1995-09-01), Kawashima
patent: 5459686 (1995-10-01), Saito

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