Semiconductor memory cell

Details Semiconductor memory cell Semiconductor memory cell

1983-06-24

1986-07-15

Fears, Terrell W.

Static information storage and retrieval

Systems using particular element

Semiconductive

365189, 365190, G11C 1136

Patent

active

046010165

ABSTRACT:
A high density, low power dissipating semiconductor memory cell is provided by connecting first and second inputs of a means for maintaining current in one of two conditions to first and second bit lines, by first and second diodes, respectively. Conveniently, the means for maintaining the current in one of two conditions includes first and second transistors operating in the normal current mode. Standby current is provided to the base of the first transistor through the first bit line and first diode, and to the base of the second transistor through the second bit line and second diode.

REFERENCES:
patent: 3564300 (1971-02-01), Henle
patent: 3703709 (1972-11-01), Matsue
patent: 3886531 (1975-05-01), McNeill
patent: 4193127 (1980-03-01), Gersbach
patent: 4279023 (1981-07-01), Houghton
patent: 4280198 (1981-07-01), Hueber et al.
patent: 4330853 (1982-05-01), Heimeier et al.
"Session XVII: Random Access Memories" IEEE 1980 Int'l Solid-State Circuits Conference, pp. 222-224, 276, S. K. Wiedmann, et al.
"Session XII: Memory Techniques" IEEE 1981 Int'l Solid-State Circuits Conference, pp. 158-159, 268, S. K. Wiedmann and D. D. Tang.

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