Semiconductor memory cell

Static information storage and retrieval – Systems using particular element – Flip-flop

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

365 53, 36518901, 36518905, G11C 1300

Patent

active

053880676

ABSTRACT:
A flip-flop is composed of inverters including first and second MISFETs each comprising a TFT or an SOI transistor. A third MISFET, which comprises a TFT or an SOI transistor, has a gate connected to a write selecting signal line, and is connected between the output terminal of one of the inverters and a write/read signal line. A fourth MISFET has a gate connected to the gate of the other inverter. A fifth MISFET has a drain and a source connected to the write/read signal line and the drain of the fourth MISFET, and a gate connected to a read selecting signal line.

REFERENCES:
patent: 5299156 (1994-03-01), Jiang et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor memory cell does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor memory cell, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory cell will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1114897

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.