Semiconductor memory cell

Details Semiconductor memory cell Semiconductor memory cell

1986-02-12

1987-12-29

Edlow, Martin H.

Static information storage and retrieval

Systems using particular element

Capacitors

365150, 365187, 357236, 357237, 357 59, 357 55, 357 41, G11C 1100, G11C 1124, G11C 1134, H01L 2978

Patent

active

047165480

ABSTRACT:
There is disclosed a semiconductor memory cell comprising a capacitor for storing charges between a data writing MOS transistor and a data reading MOS transistor.

REFERENCES:
patent: 3614749 (1971-10-01), Radcliffe
patent: 4168536 (1979-09-01), Joshi et al.
patent: 4570175 (1986-02-01), Miyao et al.
Garnache, R. R. "Complimentary FET Memory Cell", IBM Technical Disclosure Bulletin, vol. 18, No. 12, May 1976, pp. 3947-3948.
Shinchijo et al., "Polysilicon Transistors in VLSI MOS Memories," IEDM, pp. 228-231, Dec. 9, 1984.
Sunami et al., "A Corrugated Capacitor Cell (CCC)," IEEE Transactions of Electron Devices, vol. ED-31, No. 6, Jun. 1984.

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