Semiconductor memory cell

Details Semiconductor memory cell Semiconductor memory cell

2005-09-06

2005-09-06

Huynh, Andy (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S314000, C257S316000, C257S320000, C257S321000, C257S322000, C257S326000, C438S201000, C438S241000, C438S257000, C438S263000, C438S266000

Reexamination Certificate

active

06940121

ABSTRACT:
A semiconductor memory cell includes a semiconductor substrate that defines a trench having trench walls. The semiconductor memory cell also includes a floating gate electrode positioned within the trench and insulated from the trench walls by a first insulation region; a control gate electrode surrounding the trench; and a second insulation layer on the surface of the semiconductor substrate. The semiconductor memory cell further includes a conductive layer positioned on the second insulation layer. The conductive layer includes a channel region positioned above the floating gate electrode. The semiconductor memory cell also includes a source region and a drain region. The source region and the drain region are each formed in the conductive layer. The source region and the drain region are also connected to the channel region.

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