Semiconductor memory array of floating gate memory cells...

Details Semiconductor memory array of floating gate memory cells... Semiconductor memory array of floating gate memory cells...

2005-06-14

2005-06-14

Kang, Donghee (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S314000, C257S316000, C257S317000, C257S318000, C438S201000, C438S211000, C438S257000

Reexamination Certificate

active

06906379

ABSTRACT:
An array of floating gate memory cells, and a method of making same, where each pair of memory cells includes a pair of trenches formed into a surface of a semiconductor substrate, with a strip of the substrate disposed therebetween, a source region formed in the substrate strip, a pair of drain regions, a pair of channel regions each extending between the source region and one of the drain regions, a pair of floating gates each disposed in one of the trenches, and a pair of control gates. Each channel region has a first portion disposed in the substrate strip and extending along one of the trenches, a second portion extending underneath the one trench, a third portion extending along the one trench, and a fourth portion extending along the substrate surface and under one of the control gates.

REFERENCES:
patent: 4757360 (1988-07-01), Farone
patent: 4794565 (1988-12-01), Wu et al.
patent: 4882707 (1989-11-01), Mizutani
patent: 4905062 (1990-02-01), Esquivel et al.
patent: 4931847 (1990-06-01), Corda
patent: 4947221 (1990-08-01), Stewart et al.
patent: 5021848 (1991-06-01), Chiu
patent: 5029130 (1991-07-01), Yeh
patent: 5041886 (1991-08-01), Lee
patent: 5049515 (1991-09-01), Tzeng
patent: 5101250 (1992-03-01), Arima et al.
patent: 5268319 (1993-12-01), Harari
patent: 5338953 (1994-08-01), Wake
patent: 5381028 (1995-01-01), Iwasa
patent: 5429965 (1995-07-01), Shimoji
patent: 5495441 (1996-02-01), Hong
patent: 5544103 (1996-08-01), Lambertson
patent: 5572054 (1996-11-01), Wang et al.
patent: 5780341 (1998-07-01), Ogura
patent: 5780892 (1998-07-01), Chen
patent: 5789293 (1998-08-01), Cho et al.
patent: 5796139 (1998-08-01), Fukase
patent: 5808328 (1998-09-01), Nishizawa
patent: 5811853 (1998-09-01), Wang
patent: 5814853 (1998-09-01), Chen
patent: 5943572 (1999-08-01), Krautschneider
patent: 6091104 (2000-07-01), Chen
patent: 6103573 (2000-08-01), Harari et al.
patent: 6140182 (2000-10-01), Chen
patent: 6180458 (2001-01-01), Krautschneider et al.
patent: 6222227 (2001-04-01), Chen
patent: 6262917 (2001-07-01), Lee
patent: 6316298 (2001-11-01), Lee
patent: 6316315 (2001-11-01), Hofmann et al.
patent: 6521944 (2003-02-01), Mirgorodski
patent: 6525371 (2003-02-01), Johnson et al.
patent: 6538275 (2003-03-01), Sugiyama et al.
patent: 6541815 (2003-04-01), Mandelman et al.
patent: 6756633 (2004-06-01), Wang et al.
patent: 2003/0073275 (2003-04-01), Kianian et al.
patent: 0389721 (1990-10-01), None
Hayashi, Fumihiko and Plummer, James D., “A Self-Aligned Split-Gate Flash EEPROM Cell With 3-D Pillar Structure”, 1999 Symposium on VLSI Technology Digest of Technical Papers, Center for Integrated System, Stanford University, CA 94305, USA, pp. 87-88.
SZE, Simon, “Physics of Semiconductor Devices”, 2nd Edition, Wiley-Interscience, Basic Device Characteristics pp. 438-439.
Brown, William D. et al.; “Nonvolatile Semiconductor Memory Technology, A Comprehensive Guide to Understanding And Using NVSM Devices”, IEEE Press, pp. 33-34.
U.S. Appl. No. 10/358,601, filed Feb. 2003, Kianian.
U.S. Appl. No. 10/358,623, filed Feb. 2003, Hu et al.
U.S. Appl. No. 10/757,830, filed Jan. 2004, Yeh et al.
U.S. Appl. No. 10/105,741, filed Mar. 2002, Kianian.
U.S. Appl. No. 10/776,397, filed Feb. 2004, Kianian et al.
U.S. Appl. No. 10/776,483, filed Feb. 2004, Kianian et al.
U.S. Appl. No. 10/818,590, filed Apr. 2004, Kianian et al.

Affiliated with

Also associated with

Rating

Semiconductor memory array of floating gate memory cells... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor memory array of floating gate memory cells..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory array of floating gate memory cells... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3482198