Active solid-state devices (e.g. – transistors – solid-state diode – Test or calibration structure
Reexamination Certificate
2008-12-30
2011-10-25
Ngo, Ngan (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Test or calibration structure
C257S208000, C257S209000, C257SE23020
Reexamination Certificate
active
08044395
ABSTRACT:
A semiconductor memory apparatus includes a first pad group located along a first edge of a plurality of banks, a second pad group located along a second edge of the plurality of banks opposite the first pad group, and a pad control section configured to provide first and second bonding signals and to implement control operation in response to a test mode signal and a bonding option signal to selectively employ signals from the first and second pad groups.
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Baker & McKenzie LLP
Hynix / Semiconductor Inc.
Ngo Ngan
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