Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-02-05
2010-10-05
Tran, Tan N (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S314000, C257S315000, C257S316000, C257SE29129
Reexamination Certificate
active
07808035
ABSTRACT:
A semiconductor memory has a gate electrode and a pair of multilayer memory elements formed on side surfaces of the gate electrode. Each multilayer memory element includes, in sequence from the gate electrode outward, a first silicon oxide layer, a charge trapping silicon nitride layer, a second silicon oxide layer, all with L-shaped cross sections, and a protective silicon nitride layer with an approximately rectangular cross section seated in the L-shape of the second silicon oxide layer. The protective silicon nitride layer protects the charge trapping silicon nitride layer from etching damage during the formation of contact holes without adding to the area occupied by the memory cell.
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Oki Semiconductor Co., Ltd.
Rabin & Berdo PC
Tran Tan N
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